Wafer Size: 4–12 inches
Applicable Processes: Substrate and epitaxial cleaning, PR strip, oxide removal, and other processes
Standard Configuration: In accordance with SEMI-S2-93
Application Areas: Single-wafer etching, cleaning, and scrubbing processes for semiconductor materials such as silicon and silicon carbide (SiC)
Enables separate waste discharge of chemicals (acid/alkaline/organic) – eliminates cross-contamination of chemicals.
High-performance FFU with height-adjustable CUP.
Optimized process chamber design for precise dynamic environment control over the wafer surface process area.
Fully automatic operation – improves efficiency and reduces costs.
Constructed with imported panels for long-term operation in corrosive acid environments – rugged, durable, with double-layer leak protection for operator safety.