Stripping Equipment

Technical Specifications：

Wafer Size: 4–8 inches

Applicable Materials: Photoresist, PI

Applicable Substrates: Silicon, Silicon Carbide (SiC), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Lithium Niobate (LiNbO₃)

Applicable Processes: High-Temperature Stripping, Low-Temperature Stripping, Surface Treatment, Carbon Film Removal

Application Areas: Silicon-based Semiconductors, R&D, Compound Semiconductors, Power Semiconductors

Features of the equipment：

All major components are sourced from internationally recognized leading brands.

Remote inductively coupled plasma (ICP) delivers high density with low damage.

Diverse gas baffle designs provide excellent stripping uniformity.

Self-developed visual operating system is intuitive and easy to learn.

Easy maintenance with low operating costs.