PECVD

Technical Specifications：

Wafer Size: 6-inch, 8-inch

Applicable Materials: Silicon, Silicon Carbide (SiC), Gallium Nitride (GaN), Gallium Arsenide (GaAs)

Applicable Processes: Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Amorphous Silicon (α-Si), PSG, BPSG

Application Areas: Silicon-based Microdisplays, Research Institutions, Integrated Circuits, Compound Semiconductors, Power Semiconductors, LED

Features of the equipment：

All major components are sourced from internationally recognized leading brands.

Advanced single-chamber architecture delivers both high throughput and superior performance.

High-efficiency remote plasma cleaning system ensures excellent particle control.

Diverse gas baffle designs provide outstanding deposition uniformity.

Self-developed visual operating system is intuitive and easy to learn.

Easy maintenance with low operating costs.