Vertical CVD

Technical Specifications：

Parameter:Specification

Wafer Size:6-inch, 8-inch

Applicable Processes (for Silicon):POLY, Si₃N₄, TEOS, etc.

Applicable Materials:Silicon, Silicon Carbide (SiC)

Application Areas:ICs, Semiconductors, Silicon-based Microdisplays

Features of the equipment：

Advanced Pressure Control System

High-Precision Temperature Field Control Technology

Advanced Particle Control Technology

Excellent Thin Film Uniformity

Advanced Graphical User Interface